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Scientists combined graphene and boron nitride nanotubes to create a new hybrid digital switch that can be used as a basic component for controlling current in electronic products. The future is expected to make transistors that do not contain silicon semiconductors, allowing computers, mobile phones, medical devices, and other electronic products to be faster and smaller.
Graphene can be transformed into a variety of unique materials. Boron nitride nanotubes can also be processed into a variety of biological and physical materials, but these two materials do not have a place in the electronics industry: the release of electrons from graphene conductors. Too fast to control the current; boron nitride nanotubes alone are even non-conductive insulators.
According to the report of the Physicists Organization Network, Ye Yujin, a physicist from Michigan Technological University in the United States, led his team to enlarge the chemical structure of the above two materials and find their mismatch, and finally successfully developed a new hybrid digital switch. They etched many small pinholes on the surface of monolayer graphene, and then introduced boron nitride nanotubes into the pinholes. The blended material looks like a layer of bark with irregular thin hair.
Due to the mismatch of chemical structures, energy gap mismatches occur at the junction of the two materials: the thin layer of graphene conducts rapidly, and the atomic structure inside the nanotubes blocks the flow of electrons, and the mixed material therefore has a gap gap (potential). base). These energy gaps become the key to regulating and preventing the flow of electrons. The point of contact between the two materials is called a "heterojunction," and these heterojunctions are digital switches.
Studies have shown that the new hybrid switch has a higher conversion factor and its switching speed is several orders of magnitude higher than that of existing graphene converters, which will accelerate the development of electronic products and computers.
The new hybrid material can also solve two short boards of silicon semiconductors in current transistors: they cannot be smaller and generate a lot of heat. In addition, since the graphene and boron nitride nanotubes have the same atomic alignment, ie, site matching, the new digital switch can also avoid the problem of dispersion of electron flow. Only when electrons flow in the same direction can they produce more current. However, electrons often deviate from their original directions and greatly reduce the intensity and speed of current flow. The new hybrid switch can control the direction of electrons in high-speed forward currents, allowing the deviated electrons to return to the right track. (Reporter Nie Cuirong)
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