The two-dimensional layered transition metal trihalide (MX3) has attracted great interest from researchers due to its special structure and physical properties. So far, people have done a lot of experimental and theoretical research on the crystal structure, electronic structure and magnetic properties of MX3 (such as CrI3 and RuCl3), but few researches on other physical properties such as optoelectronics. This is because CrI3 and RuCl3 compounds are not stable under air conditions, which severely hinders the manufacture and application of MX3-based devices. Therefore, continuing to explore new and stable 2D MX3 materials is essential for the study of new physical phenomena and the development of new functions.
Recently, the Advanced Materials and New Energy Application Research Team of Shanghai Institute of Ceramics, Chinese Academy of Sciences, in cooperation with Peking University and Huazhong University of Science and Technology, prepared a new two-dimensional compound RhI3, and stripped the RhI3 thin slices of atomic layer thickness from large crystals. , To study its optical and electrical properties and light detection behavior. This compound exhibits excellent air and thermal stability, and the change in band gap shows a correlation with thickness (from 1.1 (18L) to 1.4 eV (2L)). The field-effect transistor composed of few layers of RhI3 flakes exhibits n-type semiconductor electrical behavior, with a carrier mobility of 2.5 cm2 V-1 s-1 and an on/off current ratio of 4×104. In an air environment at room temperature, the RhI3 photodetector has a response rate of 11.5 A W-1 and a high specific detection rate of 2×10 Jones under 980 nm light. These results indicate that the atomically thin RhI3 sheet has various potential applications in future 2D electronic and optoelectronic devices. Related research results were published on Advanced Materials with the title Honeycomb RhI3 Flakes with High Environmental Stability for Optoelectronics. The co-first authors of the paper are PhD student Wang Fakun of Huazhong University of Science and Technology and PhD student Zhang Zhuang of Shanghai Institute of Ceramics, and the co-corresponding author is Shanghai Silicon Huang Fuqiang, a researcher at the Institute of Salt Research, and Zhai Tianyou, a professor at Huazhong University of Science and Technology.
Following the new two-dimensional compound RhI3, the research team has made continuous new progress in the exploration of new compounds. Wang Yang, a PhD student at the Shanghai Institute of Ceramics, synthesized a new five-membered oxygen selenium heteroanion compound Sr4Pb1.5Sb5O5Se8 through a high temperature solid phase method, which has important scientific significance in the field of mid-infrared nonlinear optics and materials research. The related research results are based on Sr4Pb1. 5Sb5O5Se8 a new mid-infrared nonlinear optical material with a moderate SHG response was published on the journal CrystEngComm. Lin Feng, a graduate student of Shanghai Institute of Ceramics, has prepared a new Hilfer phase superconducting compound Mo6S6.8Te1.2, which has important scientific value in the field of solid-state physics and materials research. The related research results are Superconductivity in Electron-doped Chevrel- Phase Compound Mo6S6.8Te1.2 was published on Inorganic Chemistry. Pang Xin, a graduate student of Shanghai Institute of Ceramics, designed a layered material Nb2Se2C with a unique structure of "TMD-MXene" as an electrocatalyst based on the crystal structure, and it is superior to most of the current TMD, Mxene and both The electrocatalytic performance of the composite material and related research results were published on Chemical Communications under the title of Nb2Se2C: a new compound as a combination of transition metal dichalcogenide and MXene for oxygen evolution reaction.
The above-mentioned research work was funded by the National Key Research and Development Program, the National Natural Science Foundation of China, the Chinese Academy of Sciences and the Shanghai Science and Technology Commission.
RhI3 field effect transistor device schematic diagram and device performance
New compound (a) Sr4Pb1.5Sb5O5Se8 (b) Mo6S6.8Te1.2 (c) Nb2Se2C
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