In a recent report from the Physicist Organization Network on April 10, it was highlighted that 60 years ago, germanium was the material used to create the first transistor, but it was eventually replaced by silicon. However, this time is different—American scientists have now successfully developed a single-atom-thick layer of germanium, known as germanane. With electron mobility ten times higher than silicon, germanane shows great promise for building more efficient transistors in the future. The breakthrough was published in the latest issue of *Nano*, a journal by the American Chemical Society.
Germanane shares a similar structure with graphene, a two-dimensional material made of carbon atoms. Graphene is currently the thinnest, strongest, and most conductive nanomaterial available, making it ideal for next-generation electronics. However, despite its potential, graphene is still not commercially viable. That’s where germanane comes in. It offers similar benefits but with better compatibility with current semiconductor manufacturing processes.
Joshua Goldberg, an assistant professor at Ohio State University's Department of Chemistry, explained, "Many people see graphene as the future of electronics, but silicon and germanium still dominate chip production. Our goal has always been to find new forms of these materials that offer better performance, lower costs, and can be integrated into existing technologies. We’ve finally succeeded in creating a stable, single-layer germanane."
Previously, researchers had attempted to produce single-layer germanium, but this was the first time they were able to manufacture enough samples to study their properties thoroughly. Moreover, they found that the single-layer material remains stable even when exposed to air and water—something that was previously a major challenge.
In nature, germanium tends to form multi-layer crystals, which makes it difficult to isolate a single atomic layer. To overcome this, Goldberg’s team first created multi-layered germanium crystals, then inserted calcium atoms between the layers. By dissolving the calcium with water and filling the remaining bonds with hydrogen, they were able to peel off a single layer of germanane.
This single-layer material is more chemically stable than traditional silicon and does not oxidize when exposed to air or water, making it easier to handle using conventional chip fabrication techniques. Additionally, germanane has a "direct band gap," meaning it can efficiently absorb and emit light. In contrast, traditional silicon and germanium have an indirect band gap, which limits their use in optoelectronics. This property could open up new possibilities for applications such as solar cells, LEDs, and photodetectors.
According to the researchers, the electron mobility of single-layer germanane is ten times higher than that of silicon and five times that of traditional germanium. This makes it a strong candidate for high-performance computer chips. As Goldberg noted, "High electron mobility is crucial for faster and more efficient transistors. As transistors continue to shrink, we need materials with higher mobility to maintain performance. Otherwise, the transistor may fail."
Looking ahead, the research team plans to explore ways to further enhance the properties of germanane by modifying the atomic arrangement within the single layer. This ongoing work could lead to even more advanced electronic devices in the future. (Liu Xia)
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